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IXTR210P10T

IXTR210P10T

For Reference Only

Part Number IXTR210P10T
PNEDA Part # IXTR210P10T
Description MOSFET P-CH 100V 158A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,698
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTR210P10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTR210P10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTR210P10T, IXTR210P10T Datasheet (Total Pages: 6, Size: 198.44 KB)
PDFIXTR210P10T Datasheet Cover
IXTR210P10T Datasheet Page 2 IXTR210P10T Datasheet Page 3 IXTR210P10T Datasheet Page 4 IXTR210P10T Datasheet Page 5 IXTR210P10T Datasheet Page 6

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IXTR210P10T Specifications

ManufacturerIXYS
SeriesTrenchP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 105A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs740nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds69500pF @ 25V
FET Feature-
Power Dissipation (Max)595W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseTO-247-3

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