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IXTT1N250HV Datasheet

IXTT1N250HV Datasheet
Total Pages: 5
Size: 154.56 KB
IXYS
This datasheet covers 1 part numbers: IXTT1N250HV
IXTT1N250HV Datasheet Page 1
IXTT1N250HV Datasheet Page 2
IXTT1N250HV Datasheet Page 3
IXTT1N250HV Datasheet Page 4
IXTT1N250HV Datasheet Page 5

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

2500V

Current - Continuous Drain (Id) @ 25°C

1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40Ohm @ 750mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1660pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA