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IXTT1N250HV

IXTT1N250HV

For Reference Only

Part Number IXTT1N250HV
PNEDA Part # IXTT1N250HV
Description MOSFET N-CH 2500V 1.5A TO-268HV
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,732
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT1N250HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT1N250HV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT1N250HV, IXTT1N250HV Datasheet (Total Pages: 5, Size: 154.56 KB)
PDFIXTT1N250HV Datasheet Cover
IXTT1N250HV Datasheet Page 2 IXTT1N250HV Datasheet Page 3 IXTT1N250HV Datasheet Page 4 IXTT1N250HV Datasheet Page 5

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IXTT1N250HV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)2500V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1660pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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