MRF5812GR1 Datasheet
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz Gain 13dB ~ 15.5dB Power - Max 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V Current - Collector (Ic) (Max) 200mA Operating Temperature - Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz Gain 13dB ~ 15.5dB Power - Max 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V Current - Collector (Ic) (Max) 200mA Operating Temperature - Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
