MRF5812GR2
For Reference Only
| Part Number | MRF5812GR2 |
| PNEDA Part # | MRF5812GR2 |
| Description | RF TRANS NPN 15V 5GHZ 8SO |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 8,784 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MRF5812GR2 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MRF5812GR2 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MRF5812GR2 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 500MHz |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 200mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 18V Frequency - Transition 30MHz Noise Figure (dB Typ @ f) - Gain 15dB Power - Max 80W DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 5V Current - Collector (Ic) (Max) 4.5A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M113 Supplier Device Package M113 |
