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MURT10020R Datasheet

MURT10020R Datasheet
Total Pages: 3
Size: 744.26 KB
GeneSiC Semiconductor
This datasheet covers 6 part numbers: MURT10020R, MURT10020, MURT10010R, MURT10010, MURT10005R, MURT10005
MURT10020R Datasheet Page 1
MURT10020R Datasheet Page 2
MURT10020R Datasheet Page 3
MURT10020R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

-

Diode Type

Standard, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io) (per Diode)

100A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 50A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-40°C ~ 175°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT10020

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io) (per Diode)

100A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 50A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-40°C ~ 175°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT10010R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

100A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 50A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT10010

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

100A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 50A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT10005R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io) (per Diode)

100A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 50A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT10005

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io) (per Diode)

100A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 50A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower