MURT10010R
For Reference Only
| Part Number | MURT10010R |
| PNEDA Part # | MURT10010R |
| Description | DIODE MODULE 100V 100A 3TOWER |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,680 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 23 - May 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MURT10010R Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MURT10010R |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
| Datasheet |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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MURT10010R Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) (per Diode) | 100A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 50A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75ns |
| Current - Reverse Leakage @ Vr | 25µA @ 50V |
| Operating Temperature - Junction | - |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) (per Diode) 300A Voltage - Forward (Vf) (Max) @ If 650mV @ 300A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10mA @ 20V Operating Temperature - Junction -40°C ~ 175°C Mounting Type Chassis Mount Package / Case TO-244AB Supplier Device Package TO-244AB |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, TMBS® Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) (per Diode) 30A Voltage - Forward (Vf) (Max) @ If 680mV @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 450µA @ 45V Operating Temperature - Junction -40°C ~ 175°C Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
