NGTB50N60S1WG Datasheet
NGTB50N60S1WG Datasheet
Total Pages: 5
Size: 84.9 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NGTB50N60S1WG
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Manufacturer ON Semiconductor Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A Power - Max 417W Switching Energy 1.5mJ (on), 460µJ (off) Input Type Standard Gate Charge 220nC Td (on/off) @ 25°C 100ns/237ns Test Condition 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr) 94ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
