NGTB50N60S1WG
For Reference Only
| Part Number | NGTB50N60S1WG |
| PNEDA Part # | NGTB50N60S1WG |
| Description | IGBT 50A 600V TO-247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,370 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTB50N60S1WG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTB50N60S1WG |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTB50N60S1WG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 100A |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Power - Max | 417W |
| Switching Energy | 1.5mJ (on), 460µJ (off) |
| Input Type | Standard |
| Gate Charge | 220nC |
| Td (on/off) @ 25°C | 100ns/237ns |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 94ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer IXYS Series GenX3™, XPT™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 190A Current - Collector Pulsed (Icm) 380A Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 70A Power - Max 830W Switching Energy 2mJ (on), 950µJ (off) Input Type Standard Gate Charge 150nC Td (on/off) @ 25°C 30ns/90ns Test Condition 360V, 70A, 2Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 (IXXH) |
Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 45A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A Power - Max 186W Switching Energy 3mJ (on), 600µJ (off) Input Type Standard Gate Charge 120nC Td (on/off) @ 25°C 15ns/160ns Test Condition 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr) 330ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer ON Semiconductor Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 50A Power - Max 223W Switching Energy 1.1mJ (on), 1.2mJ (off) Input Type Standard Gate Charge 310nC Td (on/off) @ 25°C 117ns/285ns Test Condition 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr) 77ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
