Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTF3055L175T1G Datasheet

NTF3055L175T1G Datasheet
Total Pages: 6
Size: 109.28 KB
ON Semiconductor
This datasheet covers 2 part numbers: NTF3055L175T1G, NTF3055L175T1
NTF3055L175T1G Datasheet Page 1
NTF3055L175T1G Datasheet Page 2
NTF3055L175T1G Datasheet Page 3
NTF3055L175T1G Datasheet Page 4
NTF3055L175T1G Datasheet Page 5
NTF3055L175T1G Datasheet Page 6
NTF3055L175T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

175mOhm @ 1A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223 (TO-261)

Package / Case

TO-261-4, TO-261AA

NTF3055L175T1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

175mOhm @ 1A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223 (TO-261)

Package / Case

TO-261-4, TO-261AA