Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTF3055L175T1G

NTF3055L175T1G

For Reference Only

Part Number NTF3055L175T1G
PNEDA Part # NTF3055L175T1G
Description MOSFET N-CH 60V 2A SOT223
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,838
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTF3055L175T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTF3055L175T1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTF3055L175T1G, NTF3055L175T1G Datasheet (Total Pages: 6, Size: 109.28 KB)
PDFNTF3055L175T1G Datasheet Cover
NTF3055L175T1G Datasheet Page 2 NTF3055L175T1G Datasheet Page 3 NTF3055L175T1G Datasheet Page 4 NTF3055L175T1G Datasheet Page 5 NTF3055L175T1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTF3055L175T1G Datasheet
  • where to find NTF3055L175T1G
  • ON Semiconductor

  • ON Semiconductor NTF3055L175T1G
  • NTF3055L175T1G PDF Datasheet
  • NTF3055L175T1G Stock

  • NTF3055L175T1G Pinout
  • Datasheet NTF3055L175T1G
  • NTF3055L175T1G Supplier

  • ON Semiconductor Distributor
  • NTF3055L175T1G Price
  • NTF3055L175T1G Distributor

NTF3055L175T1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs175mOhm @ 1A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223 (TO-261)
Package / CaseTO-261-4, TO-261AA

The Products You May Be Interested In

IRFPS37N50APBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5579pF @ 25V

FET Feature

-

Power Dissipation (Max)

446W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

SUPER-247™ (TO-274AA)

Package / Case

TO-274AA

IPD60R800CEAUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

TK32A12N1,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 60V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

STE26NA90

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

3.75V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

660nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

450W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

ISOTOP

IRC530PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

Current Sensing

Power Dissipation (Max)

88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-5

Package / Case

TO-220-5

Recently Sold

MAX3221EETE+

MAX3221EETE+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 16TQFN

3314J-1-103E

3314J-1-103E

Bourns

TRIMMER 10K OHM 0.25W J LEAD TOP

74HC273D

74HC273D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC

PC28F00AP30EFA

PC28F00AP30EFA

Micron Technology Inc.

IC FLASH 1G PARALLEL 64EASYBGA

USB2512I-AEZG

USB2512I-AEZG

Microchip Technology

IC USB 2.0 2PORT HUB CTLR 36-QFN

MIC47100YMME

MIC47100YMME

Microchip Technology

IC REG LINEAR POS ADJ 1A 8MSOP

BD677A

BD677A

STMicroelectronics

TRANS NPN DARL 60V 4A SOT-32

MMBT3904-7-F

MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3

SP3232EET-L

SP3232EET-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

L7980TR

L7980TR

STMicroelectronics

IC REG BUCK ADJ 2A 8VFQFPN

BA30BC0WFP-E2

BA30BC0WFP-E2

Rohm Semiconductor

IC REG LINEAR 3V 1A TO252-5

BNX023-01L

BNX023-01L

Murata

FILTER LC 1UF SMD