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NVMYS1D2N04CLTWG Datasheet

NVMYS1D2N04CLTWG Datasheet
Total Pages: 6
Size: 198.28 KB
ON Semiconductor
This datasheet covers 1 part numbers: NVMYS1D2N04CLTWG
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NVMYS1D2N04CLTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

44A (Ta), 258A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

109nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6330pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 134W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK4 (5x6)

Package / Case

SOT-1023, 4-LFPAK