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NVMYS1D2N04CLTWG

NVMYS1D2N04CLTWG

For Reference Only

Part Number NVMYS1D2N04CLTWG
PNEDA Part # NVMYS1D2N04CLTWG
Description T6 40V LL LFPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,240
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMYS1D2N04CLTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMYS1D2N04CLTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMYS1D2N04CLTWG, NVMYS1D2N04CLTWG Datasheet (Total Pages: 6, Size: 198.28 KB)
PDFNVMYS1D2N04CLTWG Datasheet Cover
NVMYS1D2N04CLTWG Datasheet Page 2 NVMYS1D2N04CLTWG Datasheet Page 3 NVMYS1D2N04CLTWG Datasheet Page 4 NVMYS1D2N04CLTWG Datasheet Page 5 NVMYS1D2N04CLTWG Datasheet Page 6

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NVMYS1D2N04CLTWG Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C44A (Ta), 258A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs109nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6330pF @ 20V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 134W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK4 (5x6)
Package / CaseSOT-1023, 4-LFPAK

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