Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PHX8NQ11T Datasheet

PHX8NQ11T Datasheet
Total Pages: 12
Size: 92.55 KB
NXP
This datasheet covers 1 part numbers: PHX8NQ11T,127
PHX8NQ11T Datasheet Page 1
PHX8NQ11T Datasheet Page 2
PHX8NQ11T Datasheet Page 3
PHX8NQ11T Datasheet Page 4
PHX8NQ11T Datasheet Page 5
PHX8NQ11T Datasheet Page 6
PHX8NQ11T Datasheet Page 7
PHX8NQ11T Datasheet Page 8
PHX8NQ11T Datasheet Page 9
PHX8NQ11T Datasheet Page 10
PHX8NQ11T Datasheet Page 11
PHX8NQ11T Datasheet Page 12

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

110V

Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

360pF @ 25V

FET Feature

-

Power Dissipation (Max)

27.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack, Isolated Tab