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PHX8NQ11T,127

PHX8NQ11T,127

For Reference Only

Part Number PHX8NQ11T,127
PNEDA Part # PHX8NQ11T-127
Description MOSFET N-CH 110V 7.5A SOT186A
Manufacturer NXP
Unit Price Request a Quote
In Stock 8,802
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHX8NQ11T Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHX8NQ11T,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHX8NQ11T, PHX8NQ11T Datasheet (Total Pages: 12, Size: 92.55 KB)
PDFPHX8NQ11T Datasheet Cover
PHX8NQ11T Datasheet Page 2 PHX8NQ11T Datasheet Page 3 PHX8NQ11T Datasheet Page 4 PHX8NQ11T Datasheet Page 5 PHX8NQ11T Datasheet Page 6 PHX8NQ11T Datasheet Page 7 PHX8NQ11T Datasheet Page 8 PHX8NQ11T Datasheet Page 9 PHX8NQ11T Datasheet Page 10 PHX8NQ11T Datasheet Page 11

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PHX8NQ11T Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)110V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs14.7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
FET Feature-
Power Dissipation (Max)27.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack, Isolated Tab

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