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PMXB350UPEZ Datasheet

PMXB350UPEZ Datasheet
Total Pages: 15
Size: 722.12 KB
Nexperia
This datasheet covers 1 part numbers: PMXB350UPEZ
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PMXB350UPEZ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

447mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.3nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

116pF @ 10V

FET Feature

-

Power Dissipation (Max)

360mW (Ta), 5.68W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1010D-3

Package / Case

3-XDFN Exposed Pad