Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PMXB350UPEZ

PMXB350UPEZ

For Reference Only

Part Number PMXB350UPEZ
PNEDA Part # PMXB350UPEZ
Description MOSFET P-CH 20V 1.2A 3DFN
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PMXB350UPEZ Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPMXB350UPEZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PMXB350UPEZ, PMXB350UPEZ Datasheet (Total Pages: 15, Size: 722.12 KB)
PDFPMXB350UPEZ Datasheet Cover
PMXB350UPEZ Datasheet Page 2 PMXB350UPEZ Datasheet Page 3 PMXB350UPEZ Datasheet Page 4 PMXB350UPEZ Datasheet Page 5 PMXB350UPEZ Datasheet Page 6 PMXB350UPEZ Datasheet Page 7 PMXB350UPEZ Datasheet Page 8 PMXB350UPEZ Datasheet Page 9 PMXB350UPEZ Datasheet Page 10 PMXB350UPEZ Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PMXB350UPEZ Datasheet
  • where to find PMXB350UPEZ
  • Nexperia

  • Nexperia PMXB350UPEZ
  • PMXB350UPEZ PDF Datasheet
  • PMXB350UPEZ Stock

  • PMXB350UPEZ Pinout
  • Datasheet PMXB350UPEZ
  • PMXB350UPEZ Supplier

  • Nexperia Distributor
  • PMXB350UPEZ Price
  • PMXB350UPEZ Distributor

PMXB350UPEZ Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs447mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds116pF @ 10V
FET Feature-
Power Dissipation (Max)360mW (Ta), 5.68W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1010D-3
Package / Case3-XDFN Exposed Pad

The Products You May Be Interested In

IRF3315STRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NVMFS5C430NLWFAFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

TPH8R903NL,LQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

820pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 24W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

BUK7Y6R0-60EX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

45.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4021pF @ 25V

FET Feature

-

Power Dissipation (Max)

195W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

FDP61N20

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 30.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3380pF @ 25V

FET Feature

-

Power Dissipation (Max)

417W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

M24512-RMC6TG

M24512-RMC6TG

STMicroelectronics

IC EEPROM 512K I2C 1MHZ 8UFDFPN

FDS6570A

FDS6570A

ON Semiconductor

MOSFET N-CH 20V 15A 8SOIC

ESD5B5.0ST1G

ESD5B5.0ST1G

ON Semiconductor

TVS DIODE 5V SOD523

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

IS25CQ032-JBLE

IS25CQ032-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 8SOIC

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP

TAJD337K010RNJ

TAJD337K010RNJ

CAP TANT 330UF 10% 10V 2917

SCMT22F505PRBA0

SCMT22F505PRBA0

CAPACITOR 5F 20% 5.5V THRU HOLE

MP4560DN-LF-Z

MP4560DN-LF-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJUSTABLE 2A 8SOIC

ADV7183BBSTZ

ADV7183BBSTZ

Analog Devices

IC VIDEO DECODER NTSC 80-LQFP

HDSP-0770

HDSP-0770

Broadcom

DISPLAY 4X7 NUM RDP BCD HER

LIS35DE

LIS35DE

STMicroelectronics

ACCEL 2.3-9.2G I2C/SPI 14LGA