Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK1003DPN-E0#T2 Datasheet

RJK1003DPN-E0#T2 Datasheet
Total Pages: 7
Size: 76.8 KB
Renesas Electronics America
This datasheet covers 1 part numbers: RJK1003DPN-E0#T2
RJK1003DPN-E0#T2 Datasheet Page 1
RJK1003DPN-E0#T2 Datasheet Page 2
RJK1003DPN-E0#T2 Datasheet Page 3
RJK1003DPN-E0#T2 Datasheet Page 4
RJK1003DPN-E0#T2 Datasheet Page 5
RJK1003DPN-E0#T2 Datasheet Page 6
RJK1003DPN-E0#T2 Datasheet Page 7
RJK1003DPN-E0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

50A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4150pF @ 10V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3