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RJK1003DPN-E0#T2

RJK1003DPN-E0#T2

For Reference Only

Part Number RJK1003DPN-E0#T2
PNEDA Part # RJK1003DPN-E0-T2
Description MOSFET N-CH 100V 50A TO220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,970
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK1003DPN-E0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK1003DPN-E0#T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK1003DPN-E0#T2, RJK1003DPN-E0#T2 Datasheet (Total Pages: 7, Size: 76.8 KB)
PDFRJK1003DPN-E0#T2 Datasheet Cover
RJK1003DPN-E0#T2 Datasheet Page 2 RJK1003DPN-E0#T2 Datasheet Page 3 RJK1003DPN-E0#T2 Datasheet Page 4 RJK1003DPN-E0#T2 Datasheet Page 5 RJK1003DPN-E0#T2 Datasheet Page 6 RJK1003DPN-E0#T2 Datasheet Page 7

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RJK1003DPN-E0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4150pF @ 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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