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RQA0005QXDQS#H1 Datasheet

RQA0005QXDQS#H1 Datasheet
Total Pages: 15
Size: 203.07 KB
Renesas Electronics America
This datasheet covers 1 part numbers: RQA0005QXDQS#H1
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RQA0005QXDQS#H1

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

16V

Current - Continuous Drain (Id) @ 25°C

800mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

750mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

9W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

UPAK

Package / Case

TO-243AA