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RQA0005QXDQS#H1

RQA0005QXDQS#H1

For Reference Only

Part Number RQA0005QXDQS#H1
PNEDA Part # RQA0005QXDQS-H1
Description MOSFET N-CH UPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,006
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQA0005QXDQS#H1 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRQA0005QXDQS#H1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQA0005QXDQS#H1, RQA0005QXDQS#H1 Datasheet (Total Pages: 15, Size: 203.07 KB)
PDFRQA0005QXDQS#H1 Datasheet Cover
RQA0005QXDQS#H1 Datasheet Page 2 RQA0005QXDQS#H1 Datasheet Page 3 RQA0005QXDQS#H1 Datasheet Page 4 RQA0005QXDQS#H1 Datasheet Page 5 RQA0005QXDQS#H1 Datasheet Page 6 RQA0005QXDQS#H1 Datasheet Page 7 RQA0005QXDQS#H1 Datasheet Page 8 RQA0005QXDQS#H1 Datasheet Page 9 RQA0005QXDQS#H1 Datasheet Page 10 RQA0005QXDQS#H1 Datasheet Page 11

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RQA0005QXDQS#H1 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id750mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)9W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageUPAK
Package / CaseTO-243AA

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