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SCT10N120 Datasheet

SCT10N120 Datasheet
Total Pages: 13
Size: 232.26 KB
STMicroelectronics
This datasheet covers 1 part numbers: SCT10N120
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SCT10N120

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

690mOhm @ 6A, 20V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 400V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

HiP247™

Package / Case

TO-247-3