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SCT10N120

SCT10N120

For Reference Only

Part Number SCT10N120
PNEDA Part # SCT10N120
Description MOSFET N-CH 1.2KV TO247-3
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SCT10N120 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSCT10N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SCT10N120, SCT10N120 Datasheet (Total Pages: 13, Size: 232.26 KB)
PDFSCT10N120 Datasheet Cover
SCT10N120 Datasheet Page 2 SCT10N120 Datasheet Page 3 SCT10N120 Datasheet Page 4 SCT10N120 Datasheet Page 5 SCT10N120 Datasheet Page 6 SCT10N120 Datasheet Page 7 SCT10N120 Datasheet Page 8 SCT10N120 Datasheet Page 9 SCT10N120 Datasheet Page 10 SCT10N120 Datasheet Page 11

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SCT10N120 Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 20V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 400V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

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