SCT30N120 Datasheet
SCT30N120 Datasheet
Total Pages: 13
Size: 785.31 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
SCT30N120
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Manufacturer STMicroelectronics Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id 2.6V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs 105nC @ 20V Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 400V FET Feature - Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Supplier Device Package HiP247™ Package / Case TO-247-3 |
