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SCT30N120

SCT30N120 SCT30N120

For Reference Only

Part Number SCT30N120
PNEDA Part # SCT30N120
Manufacturer STMicroelectronics
Description MOSFET N-CH 1200V 45A HIP247
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 7,434
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Oct 23 - Oct 28 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SCT30N120 Resources

Brand STMicroelectronics
Mfr. Part NumberSCT30N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SCT30N120, SCT30N120 Datasheet (Total Pages: 13, Size: 785.31 KB)
PDFSCT30N120 Datasheet Cover
SCT30N120 Datasheet Page 2 SCT30N120 Datasheet Page 3 SCT30N120 Datasheet Page 4 SCT30N120 Datasheet Page 5 SCT30N120 Datasheet Page 6 SCT30N120 Datasheet Page 7 SCT30N120 Datasheet Page 8 SCT30N120 Datasheet Page 9 SCT30N120 Datasheet Page 10 SCT30N120 Datasheet Page 11

SCT30N120 Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs105nC @ 20V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1700pF @ 400V
FET Feature-
Power Dissipation (Max)270W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

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