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SI1965DH-T1-E3 Datasheet

SI1965DH-T1-E3 Datasheet
Total Pages: 7
Size: 108.67 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI1965DH-T1-E3, SI1965DH-T1-GE3
SI1965DH-T1-E3 Datasheet Page 1
SI1965DH-T1-E3 Datasheet Page 2
SI1965DH-T1-E3 Datasheet Page 3
SI1965DH-T1-E3 Datasheet Page 4
SI1965DH-T1-E3 Datasheet Page 5
SI1965DH-T1-E3 Datasheet Page 6
SI1965DH-T1-E3 Datasheet Page 7
SI1965DH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

1.3A

Rds On (Max) @ Id, Vgs

390mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 6V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)

SI1965DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

1.3A

Rds On (Max) @ Id, Vgs

390mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 6V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)