Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI1965DH-T1-GE3

SI1965DH-T1-GE3

For Reference Only

Part Number SI1965DH-T1-GE3
PNEDA Part # SI1965DH-T1-GE3
Description MOSFET 2P-CH 12V 1.3A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 46,872
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1965DH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1965DH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1965DH-T1-GE3, SI1965DH-T1-GE3 Datasheet (Total Pages: 7, Size: 108.67 KB)
PDFSI1965DH-T1-E3 Datasheet Cover
SI1965DH-T1-E3 Datasheet Page 2 SI1965DH-T1-E3 Datasheet Page 3 SI1965DH-T1-E3 Datasheet Page 4 SI1965DH-T1-E3 Datasheet Page 5 SI1965DH-T1-E3 Datasheet Page 6 SI1965DH-T1-E3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI1965DH-T1-GE3 Datasheet
  • where to find SI1965DH-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI1965DH-T1-GE3
  • SI1965DH-T1-GE3 PDF Datasheet
  • SI1965DH-T1-GE3 Stock

  • SI1965DH-T1-GE3 Pinout
  • Datasheet SI1965DH-T1-GE3
  • SI1965DH-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI1965DH-T1-GE3 Price
  • SI1965DH-T1-GE3 Distributor

SI1965DH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C1.3A
Rds On (Max) @ Id, Vgs390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds120pF @ 6V
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6 (SOT-363)

The Products You May Be Interested In

FDS6982

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.3A, 8.6A

Rds On (Max) @ Id, Vgs

28mOhm @ 6.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 10V

Power - Max

900mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

BSD235CH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

950mA, 530mA

Rds On (Max) @ Id, Vgs

350mOhm @ 950mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 1.6µA

Gate Charge (Qg) (Max) @ Vgs

0.34nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

47pF @ 10V

Power - Max

500mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

SI4569DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.6A, 7.9A

Rds On (Max) @ Id, Vgs

27mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

855pF @ 20V

Power - Max

3.1W, 3.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Manufacturer

EPC

Series

eGaN®

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

23A

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 5V

Vgs(th) (Max) @ Id

2.5V @ 7mA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

7600pF @ 40V

Power - Max

-

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

CSD88584Q5DC

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

0.95mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

12400pF @ 20V

Power - Max

12W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

22-PowerTFDFN

Supplier Device Package

22-VSON-CLIP (5x6)

Recently Sold

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812

MX25V1635FZNI

MX25V1635FZNI

Macronix

IC FLASH 16M SPI 80MHZ 8WSON

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN

AP2111MPG-13

AP2111MPG-13

Diodes Incorporated

IC USB SWITCH 2.45A CURR 8MSOP

LAN8710AI-EZK

LAN8710AI-EZK

Microchip Technology

IC TRANSCEIVER FULL 4/4 32QFN

SMD050-2

SMD050-2

Littelfuse

PTC RESET FUSE 60V 500MA 2SMD

MC74HC00ADR2G

MC74HC00ADR2G

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

ABLS2-12.000MHZ-D4Y-T

ABLS2-12.000MHZ-D4Y-T

Abracon

CRYSTAL 12.0000MHZ 18PF SMD

M29W200BB70N1

M29W200BB70N1

Micron Technology Inc.

IC FLASH 2M PARALLEL 48TSOP

B41458B8229M000

B41458B8229M000

TDK-EPCOS

CAP ALUM 22000UF 20% 63V SCREW

DS1305EN+T&R

DS1305EN+T&R

Maxim Integrated

IC RTC CLK/CALENDAR SPI 20-TSSOP

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411