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SI3586DV-T1-GE3 Datasheet

SI3586DV-T1-GE3 Datasheet
Total Pages: 9
Size: 113.97 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI3586DV-T1-GE3, SI3586DV-T1-E3
SI3586DV-T1-GE3 Datasheet Page 1
SI3586DV-T1-GE3 Datasheet Page 2
SI3586DV-T1-GE3 Datasheet Page 3
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SI3586DV-T1-GE3 Datasheet Page 5
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SI3586DV-T1-GE3 Datasheet Page 9
SI3586DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.9A, 2.1A

Rds On (Max) @ Id, Vgs

60mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

SI3586DV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.9A, 2.1A

Rds On (Max) @ Id, Vgs

60mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP