Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI3586DV-T1-E3

SI3586DV-T1-E3

For Reference Only

Part Number SI3586DV-T1-E3
PNEDA Part # SI3586DV-T1-E3
Description MOSFET N/P-CH 20V 2.9A 6TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,374
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3586DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3586DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3586DV-T1-E3, SI3586DV-T1-E3 Datasheet (Total Pages: 9, Size: 113.97 KB)
PDFSI3586DV-T1-GE3 Datasheet Cover
SI3586DV-T1-GE3 Datasheet Page 2 SI3586DV-T1-GE3 Datasheet Page 3 SI3586DV-T1-GE3 Datasheet Page 4 SI3586DV-T1-GE3 Datasheet Page 5 SI3586DV-T1-GE3 Datasheet Page 6 SI3586DV-T1-GE3 Datasheet Page 7 SI3586DV-T1-GE3 Datasheet Page 8 SI3586DV-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI3586DV-T1-E3 Datasheet
  • where to find SI3586DV-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI3586DV-T1-E3
  • SI3586DV-T1-E3 PDF Datasheet
  • SI3586DV-T1-E3 Stock

  • SI3586DV-T1-E3 Pinout
  • Datasheet SI3586DV-T1-E3
  • SI3586DV-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI3586DV-T1-E3 Price
  • SI3586DV-T1-E3 Distributor

SI3586DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.9A, 2.1A
Rds On (Max) @ Id, Vgs60mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

The Products You May Be Interested In

DMN53D0LDW-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

360mA

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

46pF @ 25V

Power - Max

310mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

SI7948DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3A

Rds On (Max) @ Id, Vgs

75mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

FDW2501N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

18mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1290pF @ 10V

Power - Max

600mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

DMN63D8LDW-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

220mA

Rds On (Max) @ Id, Vgs

2.8Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

870nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

22pF @ 25V

Power - Max

300mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

SH8K51GZETB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

35V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Rds On (Max) @ Id, Vgs

58mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 10V

Power - Max

1.4W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

Recently Sold

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

PA0277NL

PA0277NL

Pulse Electronics Power

FIXED IND 700NH 10.7A 95 MOHM

XU208-128-TQ64-C10

XU208-128-TQ64-C10

XMOS

IC MCU 32BIT ROMLESS 64TQFP

IRFP150N

IRFP150N

Infineon Technologies

MOSFET N-CH 100V 42A TO-247AC

FDS6680A

FDS6680A

ON Semiconductor

MOSFET N-CH 30V 12.5A 8-SOIC

DN2540N8-G

DN2540N8-G

Microchip Technology

MOSFET N-CH 400V 0.17A SOT89-3

MP24833GN-Z

MP24833GN-Z

Monolithic Power Systems Inc.

IC LED DRIVER

BLM31PG500SN1L

BLM31PG500SN1L

Murata

FERRITE BEAD 50 OHM 1206 1LN

A6H-8101

A6H-8101

Omron Electronics Inc-EMC Div

SWITCH SLIDE DIP SPST 25MA 24V

CAT28C64BLI90

CAT28C64BLI90

ON Semiconductor

IC EEPROM 64K PARALLEL 28DIP

0452007.MRL

0452007.MRL

Littelfuse

FUSE BRD MNT 7A 72VAC 60VDC 2SMD

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP