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SI4511DY-T1-GE3 Datasheet

SI4511DY-T1-GE3 Datasheet
Total Pages: 9
Size: 136.39 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI4511DY-T1-GE3, SI4511DY-T1-E3
SI4511DY-T1-GE3 Datasheet Page 1
SI4511DY-T1-GE3 Datasheet Page 2
SI4511DY-T1-GE3 Datasheet Page 3
SI4511DY-T1-GE3 Datasheet Page 4
SI4511DY-T1-GE3 Datasheet Page 5
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SI4511DY-T1-GE3 Datasheet Page 8
SI4511DY-T1-GE3 Datasheet Page 9
SI4511DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.2A, 4.6A

Rds On (Max) @ Id, Vgs

14.5mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4511DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.2A, 4.6A

Rds On (Max) @ Id, Vgs

14.5mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO