SI4511DY-T1-E3
For Reference Only
| Part Number | SI4511DY-T1-E3 |
| PNEDA Part # | SI4511DY-T1-E3 |
| Description | MOSFET N/P-CH 20V 7.2A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 5,436 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI4511DY-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI4511DY-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4511DY-T1-E3 Datasheet
- where to find SI4511DY-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI4511DY-T1-E3
- SI4511DY-T1-E3 PDF Datasheet
- SI4511DY-T1-E3 Stock
- SI4511DY-T1-E3 Pinout
- Datasheet SI4511DY-T1-E3
- SI4511DY-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI4511DY-T1-E3 Price
- SI4511DY-T1-E3 Distributor
SI4511DY-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A, 4.6A |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 9.6A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A, 8.5A Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V Power - Max 700mW, 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-Power33 (3x3) |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Rds On (Max) @ Id, Vgs 22mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 10V Power - Max 1.04W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 7.8A Rds On (Max) @ Id, Vgs 24mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 10V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 30A Rds On (Max) @ Id, Vgs 8mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 2110pF @ 25V Power - Max 53W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case SOT-1205, 8-LFPAK56 Supplier Device Package LFPAK56D |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Rds On (Max) @ Id, Vgs 22mOhm @ 11A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 903pF @ 15V Power - Max 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PowerDI3333-8 |
