SI4590DY-T1-GE3 Datasheet
SI4590DY-T1-GE3 Datasheet
Total Pages: 14
Size: 282.61 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI4590DY-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature - Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3.4A, 2.8A Rds On (Max) @ Id, Vgs 57mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 50V Power - Max 2.4W, 3.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
