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SI4590DY-T1-GE3

SI4590DY-T1-GE3

For Reference Only

Part Number SI4590DY-T1-GE3
PNEDA Part # SI4590DY-T1-GE3
Description MOSFET N/P CHAN 100V SO8 DUAL
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,640
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4590DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4590DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4590DY-T1-GE3, SI4590DY-T1-GE3 Datasheet (Total Pages: 14, Size: 282.61 KB)
PDFSI4590DY-T1-GE3 Datasheet Cover
SI4590DY-T1-GE3 Datasheet Page 2 SI4590DY-T1-GE3 Datasheet Page 3 SI4590DY-T1-GE3 Datasheet Page 4 SI4590DY-T1-GE3 Datasheet Page 5 SI4590DY-T1-GE3 Datasheet Page 6 SI4590DY-T1-GE3 Datasheet Page 7 SI4590DY-T1-GE3 Datasheet Page 8 SI4590DY-T1-GE3 Datasheet Page 9 SI4590DY-T1-GE3 Datasheet Page 10 SI4590DY-T1-GE3 Datasheet Page 11

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SI4590DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3.4A, 2.8A
Rds On (Max) @ Id, Vgs57mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 50V
Power - Max2.4W, 3.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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