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SI4910DY-T1-GE3 Datasheet

SI4910DY-T1-GE3 Datasheet
Total Pages: 7
Size: 102.66 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI4910DY-T1-GE3, SI4910DY-T1-E3
SI4910DY-T1-GE3 Datasheet Page 1
SI4910DY-T1-GE3 Datasheet Page 2
SI4910DY-T1-GE3 Datasheet Page 3
SI4910DY-T1-GE3 Datasheet Page 4
SI4910DY-T1-GE3 Datasheet Page 5
SI4910DY-T1-GE3 Datasheet Page 6
SI4910DY-T1-GE3 Datasheet Page 7
SI4910DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.6A

Rds On (Max) @ Id, Vgs

27mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

855pF @ 20V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4910DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.6A

Rds On (Max) @ Id, Vgs

27mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

855pF @ 20V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO