SI4910DY-T1-E3
For Reference Only
| Part Number | SI4910DY-T1-E3 |
| PNEDA Part # | SI4910DY-T1-E3 |
| Description | MOSFET 2N-CH 40V 7.6A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 4,536 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI4910DY-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI4910DY-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4910DY-T1-E3 Datasheet
- where to find SI4910DY-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI4910DY-T1-E3
- SI4910DY-T1-E3 PDF Datasheet
- SI4910DY-T1-E3 Stock
- SI4910DY-T1-E3 Pinout
- Datasheet SI4910DY-T1-E3
- SI4910DY-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI4910DY-T1-E3 Price
- SI4910DY-T1-E3 Distributor
SI4910DY-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 855pF @ 20V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
The Products You May Be Interested In
|
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A Rds On (Max) @ Id, Vgs 350mOhm @ 11A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V Power - Max 130W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case i4-Pac™-5 Supplier Device Package ISOPLUS i4-PAC™ |
Manufacturer Sanken Series - FET Type 6 N-Channel (3-Phase Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5A Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 770pF @ 10V Power - Max 5W Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case 15-SIP Exposed Tab, Formed Leads Supplier Device Package 15-ZIP |
Manufacturer Renesas Electronics America Inc. Series - FET Type 2 N-Channel (Dual) Common Drain FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.4A (Ta) Rds On (Max) @ Id, Vgs 17mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V Power - Max 3.6W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 4-VDFN Supplier Device Package 4-QFN (2x2) |
Manufacturer Rohm Semiconductor Series Automotive, AEC-Q101 FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Rds On (Max) @ Id, Vgs 65mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 10V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer Infineon Technologies Series Automotive, AEC-Q101, HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.1A Rds On (Max) @ Id, Vgs 50mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V Power - Max 2.4W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
