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SI5511DC-T1-GE3 Datasheet

SI5511DC-T1-GE3 Datasheet
Total Pages: 12
Size: 148.56 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI5511DC-T1-GE3
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SI5511DC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A, 3.6A

Rds On (Max) @ Id, Vgs

55mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

435pF @ 15V

Power - Max

3.1W, 2.6W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™