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SI5511DC-T1-GE3

SI5511DC-T1-GE3

For Reference Only

Part Number SI5511DC-T1-GE3
PNEDA Part # SI5511DC-T1-GE3
Description MOSFET N/P-CH 30V 4A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,110
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5511DC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5511DC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5511DC-T1-GE3, SI5511DC-T1-GE3 Datasheet (Total Pages: 12, Size: 148.56 KB)
PDFSI5511DC-T1-GE3 Datasheet Cover
SI5511DC-T1-GE3 Datasheet Page 2 SI5511DC-T1-GE3 Datasheet Page 3 SI5511DC-T1-GE3 Datasheet Page 4 SI5511DC-T1-GE3 Datasheet Page 5 SI5511DC-T1-GE3 Datasheet Page 6 SI5511DC-T1-GE3 Datasheet Page 7 SI5511DC-T1-GE3 Datasheet Page 8 SI5511DC-T1-GE3 Datasheet Page 9 SI5511DC-T1-GE3 Datasheet Page 10 SI5511DC-T1-GE3 Datasheet Page 11

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SI5511DC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A, 3.6A
Rds On (Max) @ Id, Vgs55mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds435pF @ 15V
Power - Max3.1W, 2.6W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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