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SI7703EDN-T1-GE3 Datasheet

SI7703EDN-T1-GE3 Datasheet
Total Pages: 7
Size: 117.88 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI7703EDN-T1-GE3, SI7703EDN-T1-E3
SI7703EDN-T1-GE3 Datasheet Page 1
SI7703EDN-T1-GE3 Datasheet Page 2
SI7703EDN-T1-GE3 Datasheet Page 3
SI7703EDN-T1-GE3 Datasheet Page 4
SI7703EDN-T1-GE3 Datasheet Page 5
SI7703EDN-T1-GE3 Datasheet Page 6
SI7703EDN-T1-GE3 Datasheet Page 7
SI7703EDN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

48mOhm @ 6.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 800µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

SI7703EDN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

48mOhm @ 6.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 800µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8