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SI7703EDN-T1-E3

SI7703EDN-T1-E3

For Reference Only

Part Number SI7703EDN-T1-E3
PNEDA Part # SI7703EDN-T1-E3
Description MOSFET P-CH 20V 4.3A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7703EDN-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7703EDN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7703EDN-T1-E3, SI7703EDN-T1-E3 Datasheet (Total Pages: 7, Size: 117.88 KB)
PDFSI7703EDN-T1-GE3 Datasheet Cover
SI7703EDN-T1-GE3 Datasheet Page 2 SI7703EDN-T1-GE3 Datasheet Page 3 SI7703EDN-T1-GE3 Datasheet Page 4 SI7703EDN-T1-GE3 Datasheet Page 5 SI7703EDN-T1-GE3 Datasheet Page 6 SI7703EDN-T1-GE3 Datasheet Page 7

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SI7703EDN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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