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SIS407ADN-T1-GE3 Datasheet

SIS407ADN-T1-GE3 Datasheet
Total Pages: 13
Size: 629.51 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIS407ADN-T1-GE3
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SIS407ADN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

168nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

5875pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 39.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8