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SIS407ADN-T1-GE3

SIS407ADN-T1-GE3

For Reference Only

Part Number SIS407ADN-T1-GE3
PNEDA Part # SIS407ADN-T1-GE3
Description MOSFET P-CH 20V 18A 1212-8 PPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,128
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS407ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS407ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS407ADN-T1-GE3, SIS407ADN-T1-GE3 Datasheet (Total Pages: 13, Size: 629.51 KB)
PDFSIS407ADN-T1-GE3 Datasheet Cover
SIS407ADN-T1-GE3 Datasheet Page 2 SIS407ADN-T1-GE3 Datasheet Page 3 SIS407ADN-T1-GE3 Datasheet Page 4 SIS407ADN-T1-GE3 Datasheet Page 5 SIS407ADN-T1-GE3 Datasheet Page 6 SIS407ADN-T1-GE3 Datasheet Page 7 SIS407ADN-T1-GE3 Datasheet Page 8 SIS407ADN-T1-GE3 Datasheet Page 9 SIS407ADN-T1-GE3 Datasheet Page 10 SIS407ADN-T1-GE3 Datasheet Page 11

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SIS407ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs9mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs168nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds5875pF @ 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 39.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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