STP80N6F6 Datasheet
STP80N6F6 Datasheet
Total Pages: 12
Size: 459.66 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STP80N6F6
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Manufacturer STMicroelectronics Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7480pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
