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STP80N6F6

STP80N6F6

For Reference Only

Part Number STP80N6F6
PNEDA Part # STP80N6F6
Description MOSFET N-CH 60V TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 15,024
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP80N6F6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP80N6F6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP80N6F6, STP80N6F6 Datasheet (Total Pages: 12, Size: 459.66 KB)
PDFSTP80N6F6 Datasheet Cover
STP80N6F6 Datasheet Page 2 STP80N6F6 Datasheet Page 3 STP80N6F6 Datasheet Page 4 STP80N6F6 Datasheet Page 5 STP80N6F6 Datasheet Page 6 STP80N6F6 Datasheet Page 7 STP80N6F6 Datasheet Page 8 STP80N6F6 Datasheet Page 9 STP80N6F6 Datasheet Page 10 STP80N6F6 Datasheet Page 11

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STP80N6F6 Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs122nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7480pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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