TPC8109(TE12L) Datasheet
TPC8109(TE12L) Datasheet
Total Pages: 7
Size: 242.44 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TPC8109(TE12L)
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP (5.5x6.0) Package / Case 8-SOIC (0.173", 4.40mm Width) |
