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TPC8109(TE12L)

TPC8109(TE12L)

For Reference Only

Part Number TPC8109(TE12L)
PNEDA Part # TPC8109-TE12L
Description MOSFET P-CH 30V 10A 8-SOP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,014
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPC8109(TE12L) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPC8109(TE12L)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPC8109(TE12L), TPC8109(TE12L) Datasheet (Total Pages: 7, Size: 242.44 KB)
PDFTPC8109(TE12L) Datasheet Cover
TPC8109(TE12L) Datasheet Page 2 TPC8109(TE12L) Datasheet Page 3 TPC8109(TE12L) Datasheet Page 4 TPC8109(TE12L) Datasheet Page 5 TPC8109(TE12L) Datasheet Page 6 TPC8109(TE12L) Datasheet Page 7

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TPC8109(TE12L) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP (5.5x6.0)
Package / Case8-SOIC (0.173", 4.40mm Width)

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