TSM22P10CZ C0G Datasheet
|
Manufacturer Taiwan Semiconductor Corporation Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 30V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 30V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package ITO-220 Package / Case TO-220-3 Full Pack, Isolated Tab |
