TSM22P10CZ C0G
For Reference Only
| Part Number | TSM22P10CZ C0G |
| PNEDA Part # | TSM22P10CZ-C0G |
| Description | MOSFET P-CHANNEL |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 2,322 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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TSM22P10CZ C0G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | TSM22P10CZ C0G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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TSM22P10CZ C0G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
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