UPA2812T1L-E1-AT Datasheet
UPA2812T1L-E1-AT Datasheet
Total Pages: 4
Size: 63.45 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
UPA2812T1L-E1-AT
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3740pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta), 52W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HVSON (3x3.3) Package / Case 8-PowerVDFN |
