Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

UPA2812T1L-E1-AT

UPA2812T1L-E1-AT

For Reference Only

Part Number UPA2812T1L-E1-AT
PNEDA Part # UPA2812T1L-E1-AT
Description MOSFET P-CH 30V 30A 8HVSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,286
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UPA2812T1L-E1-AT Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberUPA2812T1L-E1-AT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
UPA2812T1L-E1-AT, UPA2812T1L-E1-AT Datasheet (Total Pages: 4, Size: 63.45 KB)
PDFUPA2812T1L-E1-AT Datasheet Cover
UPA2812T1L-E1-AT Datasheet Page 2 UPA2812T1L-E1-AT Datasheet Page 3 UPA2812T1L-E1-AT Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • UPA2812T1L-E1-AT Datasheet
  • where to find UPA2812T1L-E1-AT
  • Renesas Electronics America

  • Renesas Electronics America UPA2812T1L-E1-AT
  • UPA2812T1L-E1-AT PDF Datasheet
  • UPA2812T1L-E1-AT Stock

  • UPA2812T1L-E1-AT Pinout
  • Datasheet UPA2812T1L-E1-AT
  • UPA2812T1L-E1-AT Supplier

  • Renesas Electronics America Distributor
  • UPA2812T1L-E1-AT Price
  • UPA2812T1L-E1-AT Distributor

UPA2812T1L-E1-AT Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3740pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 52W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HVSON (3x3.3)
Package / Case8-PowerVDFN

The Products You May Be Interested In

BSS138WH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

280mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

1.4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

43pF @ 25V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT323-3

Package / Case

SC-70, SOT-323

IRF7842TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

QS6U24TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

400mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

90pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6

IRFU1205

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

R6003KND3TL1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

185pF @ 25V

FET Feature

-

Power Dissipation (Max)

44W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

BTS723GWXUMA1

BTS723GWXUMA1

Infineon Technologies

IC PWR SW 2CH 58V HISIDE PDSO14

CK45-R3DD102KAVRA

CK45-R3DD102KAVRA

TDK

CAP CER 1000PF 2KV RADIAL

MM74C923WM

MM74C923WM

ON Semiconductor

IC ENCODER 20-KEY 20-SOIC

US6K1TR

US6K1TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT6

AD8056ARZ

AD8056ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

PS2805-1-A

PS2805-1-A

CEL

OPTOISOLATOR 2.5KV TRANS 4SOIC

BZX84C3V3LT1G

BZX84C3V3LT1G

ON Semiconductor

DIODE ZENER 3.3V 225MW SOT23-3

RO-0505S

RO-0505S

Recom Power

DC DC CONVERTER 5V 1W

NM93CS46M8

NM93CS46M8

ON Semiconductor

IC EEPROM 1K SPI 1MHZ 8SO

PIC18F1220-I/SO

PIC18F1220-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

MAX6818EAP

MAX6818EAP

Maxim Integrated

IC DEBOUNCER SWITCH OCTAL 20SSOP

IHLP1616BZERR47M11

IHLP1616BZERR47M11

Vishay Dale

FIXED IND 470NH 7A 16 MOHM SMD