Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

UPA2812T1L-E1-AT

UPA2812T1L-E1-AT

For Reference Only

Part Number UPA2812T1L-E1-AT
PNEDA Part # UPA2812T1L-E1-AT
Description MOSFET P-CH 30V 30A 8HVSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,286
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UPA2812T1L-E1-AT Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberUPA2812T1L-E1-AT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
UPA2812T1L-E1-AT, UPA2812T1L-E1-AT Datasheet (Total Pages: 4, Size: 63.45 KB)
PDFUPA2812T1L-E1-AT Datasheet Cover
UPA2812T1L-E1-AT Datasheet Page 2 UPA2812T1L-E1-AT Datasheet Page 3 UPA2812T1L-E1-AT Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • UPA2812T1L-E1-AT Datasheet
  • where to find UPA2812T1L-E1-AT
  • Renesas Electronics America

  • Renesas Electronics America UPA2812T1L-E1-AT
  • UPA2812T1L-E1-AT PDF Datasheet
  • UPA2812T1L-E1-AT Stock

  • UPA2812T1L-E1-AT Pinout
  • Datasheet UPA2812T1L-E1-AT
  • UPA2812T1L-E1-AT Supplier

  • Renesas Electronics America Distributor
  • UPA2812T1L-E1-AT Price
  • UPA2812T1L-E1-AT Distributor

UPA2812T1L-E1-AT Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3740pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 52W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HVSON (3x3.3)
Package / Case8-PowerVDFN

The Products You May Be Interested In

ZVP2106ASTOB

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

280mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 18V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

SPP20N60S5

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

5.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

SPP24N60CFDHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

21.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

185mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id

5V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3160pF @ 25V

FET Feature

-

Power Dissipation (Max)

240W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

BSS138WH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

280mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

1.4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

43pF @ 25V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT323-3

Package / Case

SC-70, SOT-323

IRFU1205

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

L7815CV-DG

L7815CV-DG

STMicroelectronics

IC REG LINEAR 15V 1.5A TO220

BLM21PG221SN1D

BLM21PG221SN1D

Murata

FERRITE BEAD 220 OHM 0805 1LN

ATF-54143-TR1G

ATF-54143-TR1G

Broadcom

FET RF 5V 2GHZ SOT-343

DHRB34C102M2FB

DHRB34C102M2FB

Murata

CAP CER 1000PF 15KV RADIAL

AD5421BREZ

AD5421BREZ

Analog Devices

IC DAC 16BIT V-OUT 28TSSOP

MAX3221EAE

MAX3221EAE

Maxim Integrated

IC TRANSCEIVER FULL 1/1 16SSOP

NFE31PT222Z1E9L

NFE31PT222Z1E9L

Murata

FILTER LC(T) 2200PF SMD

IRFZ44NPBF

IRFZ44NPBF

Infineon Technologies

MOSFET N-CH 55V 49A TO-220AB

LTC3780EG#PBF

LTC3780EG#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK-BOOST 24SSOP

ADM2587EBRWZ

ADM2587EBRWZ

Analog Devices

DGTL ISO RS422/RS485 20SOIC

AK4480EF

AK4480EF

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 216K 30VSOP

SMBJ5.0CA

SMBJ5.0CA

TVS DIODE 5V 9.2V SMB