VS-GA200HS60S1 Datasheet
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 480A Power - Max 830W Vce(on) (Max) @ Vge, Ic 1.21V @ 15V, 200A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 32.5nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |
Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 480A Power - Max 830W Vce(on) (Max) @ Vge, Ic 1.21V @ 15V, 200A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 32.5nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |
